Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon
- 1 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (14) , 1886-1888
- https://doi.org/10.1063/1.116283
Abstract
A 4 cm long Er‐doped Al2O3 spiral waveguide amplifier was fabricated on a Si substrate, and integrated with wavelength division multiplexers within a total area of 15 mm2. When pumped with 9 mW 1.48 μm light from a laser diode, the amplifier shows 2.3 dB net optical gain at 1.53 μm. The gain threshold was 3 mW. The amplifier was doped with Er by ion implantation to a concentration of 2.7×1020 cm−3. The data agree well with calculations based on a model which includes the effects of cooperative upconversion and excited state absorption. For an optimized amplifier, net optical gain of 20 dB is predicted.Keywords
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