MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
- 1 October 1996
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (10) , 1515-1518
- https://doi.org/10.1016/0038-1101(96)00059-7
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentrationIEEE Transactions on Electron Devices, 1994
- Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET'sIEEE Transactions on Electron Devices, 1986