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Effects of X-Ray Irradiation on the Channel Hot-Carrier Reliability of Thin-Oxide n-Channel MOSFETs
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Effects of X-Ray Irradiation on the Channel Hot-Carrier Reliability of Thin-Oxide n-Channel MOSFETs
Effects of X-Ray Irradiation on the Channel Hot-Carrier Reliability of Thin-Oxide n-Channel MOSFETs
JS
J. Y. -C. Sun
J. Y. -C. Sun
JM
J. R. Maldonado
J. R. Maldonado
MR
M. D. Rodriguez
M. D. Rodriguez
JL
J. Laskar
J. Laskar
DZ
D. S. Zicherman
D. S. Zicherman
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1 January 1986
conference paper
Published by
Japan Society of Applied Physics
https://doi.org/10.7567/ssdm.1986.a-9-2
Abstract
1986 International Conference on Solid State Devices and Materials,Search for presentations
Keywords
HOT CARRIER
CHANNEL MOSFETS
THIN OXIDE
CHANNEL HOT
X RAY IRRADIATION
CARRIER RELIABILITY
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