Surface modification in plasma-assisted etching of silicon
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 825-830
- https://doi.org/10.1016/0168-583x(85)90477-x
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Ion-assisted etching of silicon by molecular chlorineJournal of Vacuum Science & Technology A, 1984
- A high resolution EELS study of free-carrier variations in H+2/H+ bombarded (100)GaAsJournal of Vacuum Science & Technology B, 1984
- Silicon Damage Caused by Hydrogen Containing PlasmasJournal of the Electrochemical Society, 1983
- Damage induced in Si by ion milling or reactive ion etchingJournal of Applied Physics, 1983
- Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etchingJournal of Vacuum Science & Technology A, 1983
- Surface studies of and a mass balance model for Ar+ ion-assisted Cl2 etching of SiJournal of Vacuum Science & Technology B, 1983
- Basic chemistry and mechanisms of plasma etchingJournal of Vacuum Science & Technology B, 1983
- The design of plasma etchantsPlasma Chemistry and Plasma Processing, 1981
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981
- Radiation damage in silicon dioxide films exposed to reactive ion etchingJournal of Applied Physics, 1979