Electrical Properties of Gallium Antimonide

Data are presented on the conductivity and Hall coefficient of several samples of GaSb over the temperature from -196°C to 650°C. The lowest room-temperature conductivity obtained was 12 ${\mathrm{ohm}}^{-1\mathrm{}}$ ${\mathrm{cm}}^{-1\mathrm{}}$. All material produced from zone-purified components was $p$-type. $N$-type material was produced by doping with tellurium, as were $p-n$ junctions. The intrinsic band gap is estimated from junction rectification data to be 0.78 ev at -196°C. The mobility of electrons was found by measurement on $n$-type material to be several times greater than the hole mobility. The mobilities of both holes and electrons are found to vary approximately as $T^{-\frac{3}{2}}$ in the lattice scattering range.