Monte Carlo Simulation of Gunn Domain Formations

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Abstract
A Monte Carlo simulation is applied to a study of the Gunn domain dynamics in n-type GaAs. The model simulated is that in which the electrons are accelerated by the electric field and scattered by the phonons under the two-valley semiconductor model, and the Gunn domain grows and propagates toward the anode. The domain formed at the cold region due to the thermalization effect at the cathode propagates firstly in the accumulation mode, and the next domain which is formed after the first domain has reached at the anode propagates in the dipole mode. On the other hand, the domain formed at the notch propagates in the dipole mode as predicted by earlier theories.

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