Nonlinear optics near the metal insulator transition
- 1 November 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (8) , 645-648
- https://doi.org/10.1016/0038-1098(86)90260-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Hole induced four wave mixing and intervalence band relaxation times in p-GaAs and p-GeSolid State Communications, 1985
- Degenerate four-wave mixing due to intervalance band transition in p-type mercury cadmium tellurideApplied Physics Letters, 1983
- Nonlinear optical studies of picosecond relaxation times of electrons in n-GaAs and n-GaSbApplied Physics Letters, 1983
- Difference-frequency variation of the free-carrier-induced, third-order nonlinear susceptibility in n-InSbApplied Physics Letters, 1982
- Determination of the third-order nonlinear optical coefficients of germanium through ellipse rotationOptics Letters, 1980
- Optical Third-Order Mixing in GaAs, Ge, Si, and InAsPhysical Review B, 1969
- Electrons in disordered structuresAdvances in Physics, 1967
- Theory of Optical Mixing by Mobile Carriers in SemiconductorsPhysical Review Letters, 1966
- Optical Nonlinearities due to Mobile Carriers in SemiconductorsPhysical Review Letters, 1966
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958