Coordinatively saturated Ga compounds — A new type of group III precursor for the MOCVD of GaAs
- 2 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (1-2) , 290-292
- https://doi.org/10.1016/0022-0248(90)90913-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The growth of GaAs at reduced pressure in an organometallic CVD systemJournal of Crystal Growth, 1984
- Electron mobility in n-type GaAs at 77 K: Determination of the compensation ratioJournal of Applied Physics, 1982