Room-temperature InAsxSbyP1−x−y light-emitting diodes for CO2 detection at 4.2 μm
- 11 June 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24) , 2428-2429
- https://doi.org/10.1063/1.102899
Abstract
By using a graded composition InAsSbP quaternary layer grown by liquid phase epitaxy it was possible to fabricate light‐emitting diodes which emit near 4.2 μm at room temperature, corresponding to the fundamental absorption of CO2 gas.Keywords
This publication has 4 references indexed in Scilit:
- Laser oscillation at 3-4 µm optically pumped InAs1-x-ySbxPyIEEE Journal of Quantum Electronics, 1985
- Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 μmPublished by Elsevier ,1985
- Liquid phase epitaxial growth of InAsxSbyPl-x-y layers on InAsJournal of Electronic Materials, 1977
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971