Magnetic properties and imaging of Mn-implanted GaAs semiconductors
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 5296-5298
- https://doi.org/10.1063/1.361356
Abstract
Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x‐ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room‐temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single‐domain state predominates.This publication has 7 references indexed in Scilit:
- GMR materials for low field applicationsIEEE Transactions on Magnetics, 1993
- Giant magnetoresistance in nonmultilayer magnetic systemsPhysical Review Letters, 1992
- Giant magnetoresistance in heterogeneous Cu-Co alloysPhysical Review Letters, 1992
- Oscillatory magnetic exchange coupling through thin copper layersPhysical Review Letters, 1991
- Hybrid Ferromagnetic-Semiconductor StructureScience, 1990
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- A mechanism of magnetic hysteresis in heterogeneous alloysPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1948