Abstract
The appearance potentials for a large number of organosilicon ions have been measured. Combination of these values with thermochemical heats of combustion allow the determination of bond energy terms which may be used to calculate heats of formation for all silicon compounds containing hydrogen, alkyl and chlorine ligands. The bond dissoziation energies D(Si - H)= 89 ± 4, D(Si - C) = 85 ± 4 and D (Si - Si) =75 ± 8 kcal/Mol were found to be independent of the number of methylgroups attached to silicon. In addition the Si - Cl bond energy was found to be 116 and 104 kcal/Mol in (CH3)3SiCl and Cl3SiCl respectively.

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