Trimming CMOS smart imager with tunneleffect nonvolatile analogue memory
- 30 September 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (20) , 1766-1767
- https://doi.org/10.1049/el:19931176
Abstract
Amplified MOS imagers (AMIs) have the advantage of being compatible with conventional CMOS analogue/digital circuit design. One of the major problems in AMIs is their large fixed pattern noise compared to CCD imagers. The Letter presents the structure of a nonvolatile tunnel-effect analogue memory which is fully compatible with a standard CMOS process and which can reduce significantly the offset-like fixed pattern noise in AMI arrays.Keywords
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