Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 AA and a buried oxide thickness of 3500 AA. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field.<>Keywords
This publication has 1 reference indexed in Scilit:
- Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI filmIEEE Transactions on Electron Devices, 1989