Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h
Open Access
- 19 December 2002
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 1,p. 377-381
- https://doi.org/10.1002/pssc.200390067
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Improvement on epitaxial grown of InN by migration enhanced epitaxyApplied Physics Letters, 2000
- Transient electron transport in wurtzite GaN, InN, and AlNJournal of Applied Physics, 1999
- Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1999
- Electron transport in wurtzite indium nitrideJournal of Applied Physics, 1998
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992