Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

• 1 January 2001
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 353-356, 131-134
• https://doi.org/10.4028/www.scientific.net/msf.353-356.131

Abstract

Keywords

• DLTS
• EPITAXIAL GROWTH
• PHOTOLUMINESCENCE (PL)
• SCHOTTKY DIODE