2.51 eV photoluminescence from Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition
- 21 June 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (25) , 3306-3308
- https://doi.org/10.1063/1.109054
Abstract
A photoluminescence (PL) peak at 2.51 eV was observed at 77 K in Zn‐doped CuAlSe2 chalcopyrite semiconductor epilayers grown by a low‐pressure metalorganic chemical vapor deposition. The emission can be seen as blue‐green. The PL peak at 2.51 eV was absent in Al‐rich epilayers. Photoreflectance measurements were performed on both undoped and Zn‐doped CuAlSe2 epilayers. Zn doping up to the level of 0.02 at. % did not affect the valence band profile.Keywords
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