VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES

1 November 1987

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 48 (C5) , C5-553
https://doi.org/10.1051/jphyscol:19875119

Abstract

We calculate the valence subband dispersion of Si0.5Ge0.5 - Si strained layer structures grown on a Si (001) substrate and on a Si0.75Ge0.25 buffer. We use the 6x6 Luttinger-Kohn Hamiltonian, including the effects both of strain and of the split-off band. The heavy-hole zone centre states are separated by over 60meV from the light-hole states and the highest valence subband has a low zone-centre effective mass (m* ~ .15 - .18), suggesting such structures to be useful for high hole mobility applications. Away from the zone centre, the bands are strongly anisotropic. We predict little difference in electronic properties for p-type Si0.5Ge0.5-Si superlattices when grown on Si substrates or Si0.75Ge0.25 buffers

Keywords

This publication has 0 references indexed in Scilit: