Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices

1 January 1983

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 22 (S1)
https://doi.org/10.7567/jjaps.22s1.213

Abstract

An electron beam annealing (EBA) system with high current electron-emitter and oil-free pump evacuated chamber was newly developed. Parameters in grain growth of silicon on insulator (SOI) were analyzed, and large grained-poly-si with dimensions of 20 µm × several millimeters was stably and reproducibly obtained on Si₃N₄ film. MOSFET's (L=1.5 to 50 µm), inverters, and ring oscillators with well controlled threshold voltages were successfully fabricated in the recrystallized SOI. Back interface conductions were clarified by drain current (I _D)-back gate voltage (V _BG) measurements. A hysteresis loop was found in the I _D-V _BG relation, which is considered due to charge injection into Si₃N₄ layer.

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