A heterojunction bipolar transistor large-signal model for high power microwave applications
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Temperature-dependent large signal model of heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A complete and consistent electrical/thermal HBT modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A physics-based temperature-dependent SPICE model for the simulation of high temperature microwave performance of HBT's and experimental resultsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new large signal HBT modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Volterra series based nonlinear simulation of HBTsusing analytically extracted modelsElectronics Letters, 1994
- Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistorsIEEE Electron Device Letters, 1993
- The effect of thermal shunt on the current instability of multiple-emitter-finger heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter dataIEEE Transactions on Microwave Theory and Techniques, 1992