Reverse contrast imaging in GaAs
- 2 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 103 (1-4) , 303-310
- https://doi.org/10.1016/0022-0248(90)90204-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittanceJournal of Applied Physics, 1985
- Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi-insulating GaAsJournal of Applied Physics, 1984
- Photoinduced quenching of infrared absorption nonuniformities of large diameter GaAs crystalsApplied Physics Letters, 1984