High-efficiency blue luminescence from MOCVD-grown ZnSe at room temperature

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Abstract
The cathodoluminescence properties of undoped ZnSe layers grown by MOCVD onto GaAs substrates have been studied. Intrinsic and extrinsic luminescence processes are observed at liquid nitrogen temperatures, and at room temperature luminescence is shown to result from band-to-band recombination. The external quantum efficiency for this blue luminescence at 300 K is estimated to be 0.1%, and an internal quantum efficiency as high as 30% is deduced from the result.

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