Numerical Analysis of Charge-Redistribution Processes Involving Trapping Centers

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Abstract
A method for calculating charge-transfer processes in solids has been developed which is particularly suited for use with a computer. In this instance it has been applied to the computation of thermoluminescent glow curves. The concentrations of all defects in the crystal, which enter into the calculations, and all normal lattice sites in the host crystal are specified. Also, the initial electron, hole, and exciton, i.e., excited-state, populations are specified. The computation proceeds in arbitrarily small time steps. During each step the concentrations of trapped charge, the carrier concentrations, the radiative relaxations of excited centers, etc. are adjusted in accord with the physical processes involved. The temperature is fixed during each computational time increment, but may be made an arbitrary function of time. When used to analyze experimental data, some initial conditions usually are fixed and a process of successive approximations is used to determine the remaining parameters, e.g., activation energies and preexponential factors. The method is designed to analyze data in cases which cannot be described by tractable analytical expressions or when a closed expression cannot be applied readily. It has been used for analyses of measurements of thermoluminescence in lithium fluoride by Townsend, Clark, and Levy. As an example, the analysis of one of their glow peaks is included.

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