An 11-GHz GaAs frequency divider using source-coupled FET Logic

1 January 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (1) , 47-48
https://doi.org/10.1109/edl.1986.26287

Abstract

A GaAs one-fourth frequency divider is fabricated to evaluate the ultrahigh-speed performance of source-coupled FET logic (SCFL) having normally-on FET's with small negative V th values. High-transconductance (240 ms/mm) 1/2-µm gate-length FET's and an air-bridge interconnection line technology are successfully developed. A maximum toggle frequency F max of 11 GHz is achieved with a power dissipation of 149 mW. Furthermore, 9.7-GHz F max with low power dissipation of 52 mW was also obtained.

Keywords

GALLIUM ARSENIDE
FREQUENCY CONVERSION
FETS
POWER DISSIPATION
INTEGRATED CIRCUIT INTERCONNECTIONS
FABRICATION
LOGIC CIRCUITS
THRESHOLD VOLTAGE
CAPACITANCE
RING OSCILLATORS

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