Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors
- 1 September 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (9) , 715-723
- https://doi.org/10.1088/0268-1242/4/9/003
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductorsSemiconductor Science and Technology, 1988
- A lifetime in Auger transitionsJournal of Physics and Chemistry of Solids, 1988
- Impact ionisation rate and soft energy thresholds for anisotropic parabolic band structuresSemiconductor Science and Technology, 1988
- Effect of anisotropy and warping on the Auger lifetime of direct gap semiconductorsSolid State Communications, 1987
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957