Novel material for visible-blind UV detectors
- 14 September 1994
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
Abstract
Boron nitride phosphide (BNxP1-x) films were grown on single crystal GaAs, using chemical vapor deposition. The films were smooth, well adhered to the substrate and exhibited resistivities on the order of 1011 ohm-cm. Photoconductive detectors fabricated from these films showed quantum efficiencies of 33% and 40% at 254 nm and 365 nm respectively, with a drop of an order of magnitude at wavelengths greater than 400 nm. These measurements demonstrate the potential of BNxP1-x as a material for visible- blind UV detectors.Keywords
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