Capacitance measurements on organic-semiconductor Schottky barriers—A new approach
- 15 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (10) , 694-696
- https://doi.org/10.1063/1.90608
Abstract
Schottky‐barrier parameters of an organic‐semiconductor thin‐film cell have been determined by a capacitor discharge method which is appropriate for systems where high resistance, trapping, and/or slow impurity ionization dynamics may prevent the use of conventional measurement techniques.Keywords
This publication has 3 references indexed in Scilit:
- Properties of Al(copper phthalocyanine)Ag diode structures with Schottky barriersThin Solid Films, 1977
- Photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag Schottky-barrier cellsJournal of Applied Physics, 1974
- Microwave Dielectric Constant and Conductivity Measurements in the PhthalocyaninesThe Journal of Chemical Physics, 1972