A 900 MHz SOI fully-integrated RF power amplifier for wireless transceivers
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01936530,p. 382-383
- https://doi.org/10.1109/isscc.2000.839825
Abstract
This 900 MHz fully-integrated power amplifier (IPA) for the first time uses SOI lateral double-diffused MOS transistors (LDMOSTs) and high-Q on-chip inductors. The IPA uses a 1.5 /spl mu/m LDMOS (0.35 /spl mu/m channel length 3.85 /spl mu/m drift length 4.5 GHz f/sub T/, 20 V breakdown) technology, which is compatible with CMOS and BJT for baseband and receiver functions. This makes it suitable for single-chip transceiver application. The IPA delivers +23 dBm output power with 16 dB gain and 49% power added efficiency (PAE) at 900 MHz, and is suitable for mobile phone handset application.Keywords
This publication has 2 references indexed in Scilit:
- Thin film SOI emergesIEEE Spectrum, 1997
- Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmittersIEEE Journal of Solid-State Circuits, 1995