Preliminary investigation of a bismuth titanate memory
- 1 June 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 16 (6) , 576-579
- https://doi.org/10.1109/T-ED.1969.16802
Abstract
Design considerations and initial experimental results are presented for a photoconductor-ferroelectric memory scheme employing monoclinic bismuth titanate as the ferroelectric. Photoconductor access during writing has been achieved, and the non-destructive optical READ capability of bismuth titanate has been demonstrated. These results indicate that by means of such a device, a completely optically accessed memory plane is possible.Keywords
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