Hydrogen content of a variety of plasma-deposited silicon nitrides
- 1 August 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (8) , 5630-5633
- https://doi.org/10.1063/1.331445
Abstract
The hydrogen contents and etch rates have been measured for plasma‐deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited nitrides. The hydrogen contents vary from 4% to 39% (atomic). A correlation is observed between etch rate and hydrogen content, with etch rates varying over three orders of magnitude.This publication has 5 references indexed in Scilit:
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