Core-Level Binding-Energy Shifts Due to Reconstruction on the Si(111) 2 × 1 Surface
- 27 October 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 45 (17) , 1414-1418
- https://doi.org/10.1103/physrevlett.45.1414
Abstract
High-resolution photoemission spectra of the Si level for freshly cleaved Si(111) reveal two additional core-level structures which are shifted relative to the bulk. The observed shifts are 0.59±0.04 eV to lower and 0.3±0.03 eV to higher binding energy, respectively. These shifted peaks, which vanish with increasing contamination of the surface, are shown to be directly correlated with reconstruction on the Si(111) 2×1 surface.
Keywords
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