Theory of the photoluminescence spectra of porous silicon
- 15 August 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (8) , 5329-5334
- https://doi.org/10.1103/physrevb.50.5329
Abstract
Porous silicon (PS) with its distribution of crystallite sizes is a highly disordered material. We present a theoretical formulation to explain the photoluminescence (PL) spectra of porous silicon. We base our formalism on the quantum confinement model using methods similar to those of Kane and Lifshitz. A minimal set of parameters is employed whose numerical values are obtained from independent experiments and/or microscopic theories. Our work demonstrates (i) a downshift in the PL peak due to the size distribution, thus facilitating the use of smaller and physically reasonable exciton binding energy; (ii) a PL spectrum with a line-shape asymmetry on the energy scale, having a full width at half maximum of ≃350 eV, in consonance with experiments; (iii) the presence of both columns and dots in PS; (iv) the presence of local inhomogeneities. Modifications of our model and extensions to related experimental phenomena are also discussed.Keywords
This publication has 33 references indexed in Scilit:
- An oligosilane bridge model for the origin of the intense visible photoluminescence of porous siliconJournal of Applied Physics, 1993
- Siloxene: Chemical quantum confinement due to oxygen in a silicon matrixPhysical Review Letters, 1992
- Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?Applied Physics Letters, 1992
- excitation: An alternate mechanism for porous Si photoluminescencePhysical Review B, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- The energy spectrum of disordered systemsAdvances in Physics, 1964
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963