Zero-bias modulation of tapered-thickness waveguidelasers with semi-insulating blocking layer
- 8 May 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (10) , 871-872
- https://doi.org/10.1049/el:19970606
Abstract
The authors demonstrate zero-bias modulation of narrow-beam-divergence tapered-thickness waveguide lasers. The reduction of the parasitic capacitance by introducing a semi-insulating blocking layer made the turn-on delay < 1 ns at 85°C, even when no bias voltage was applied. 155.52 Mbit/s penalty-free 40 km transmission under zero-bias conditions was achieved.Keywords
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