On the Epitaxial Relationships of TiSi2 on Silicon
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R)
- https://doi.org/10.1143/jjap.24.1421
Abstract
A structural study on the epitaxial relationships of TiSi2 on silicon has been carried out by transmission electron microscopy. Metallic films, heat treated at high temperatures (750 and 850°C), react with silicon forming the orthorhombic TiSi2 phase with quite large grains, up to 5 µm in diameter, which present some orientation relationships with the crystalline bulk. They are [011]TiSi2 //[001]Si, [110]TiSi2 //[001]Si, [010]TiSi2 //[001]Si.Keywords
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