The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma

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Abstract
By means of a resistance thermometer structure diffused into the surface of a silicon wafer the temperature has been found to increase within a minute to over 100°C in a CF4 plasma. In contrast the system temperature rises only about 5 °C in the same time. This applies to a system in the tunnel configuration. In a parallel plate system the rise is far less steep and even within the usual etching time an equilibrium temperature is reached. The dependence of the etch rate on the surface temperature has been measured. In the interval from R.T. and 100 °C the etch rate stays nearly the same. Therefore temperature is no significant parameter for establishing desired etch rates

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