A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 647-650
- https://doi.org/10.1109/mwsym.1996.511016
Abstract
A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in Personal Handy-Phone System in the 1.9 GHz band. In combination with MESFETs with low on-resistance and high breakdown voltage, the resonant-type switch IC utilizes stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.Keywords
This publication has 4 references indexed in Scilit:
- SPDT switch MMIC using E/D-mode GaAs JFETs for personal communicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-performance GaAs switch ICs fabricated using MESFETs with two kinds of pinch-off voltages [for handy phone]Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A GaAs RF transceiver IC for 1.9 GHz digital mobile communication systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A low-voltage, high-power T/R-switch MMIC using LC resonatorsIEEE Transactions on Microwave Theory and Techniques, 1995