Low threshold, electrically injected InGaAsP (1.3 μm) vertical cavity lasers on GaAs substrates
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 181-182
- https://doi.org/10.1109/drc.1993.1009634
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasersApplied Physics Letters, 1993
- 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substratesApplied Physics Letters, 1992
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser DiodeJapanese Journal of Applied Physics, 1990