A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Electrons

1 January 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 29 (6) , 1970-1974
https://doi.org/10.1109/TNS.1982.4336480

Abstract

The total ionizing dose response of ten bipolar transistor types has been measured using Co-60 gamma rays and 2.2 MeV electrons from exposure levels of 750, 1500, and 3000 Gy(Si). Gain measurements were made for a range of collector-emitter voltages and collector currents.

Keywords

GAMMA RAYS
PROPULSION
LABORATORIES
BIPOLAR TRANSISTORS
ELECTRON BEAMS
TESTING
SILICON
CHARGE CARRIER LIFETIME
DEGRADATION
FREQUENCY

This publication has 2 references indexed in Scilit:

Total-dose radiation-effects data for semiconductor devices. Vol. 1
Published by Office of Scientific and Technical Information (OSTI) ,1981
Correlation of Displacement Effects Produced by Electrons Protons and Neutrons in Silicon
IEEE Transactions on Nuclear Science, 1975