Extending gate dielectric scaling limit by use of nitride or oxynitride
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited (JVD) nitrides/oxynitrides are shown to verify the theoretical trend. These results suggest that extending the scaling limit well below 4 nm of EOT is possible with the JVD nitride.Keywords
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