Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs

This publication has 23 references indexed in Scilit:

• New insight into hot-electron-induced degradation of n-MOSFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's
  IEEE Transactions on Electron Devices, 1988
• Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology
  IEEE Transactions on Electron Devices, 1987
• A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET's
  IEEE Electron Device Letters, 1986
• Hot electrons and holes in MOSFET's biased below the Si—SiO₂interfacial barrier
  IEEE Electron Device Letters, 1985
• A simple method to determine channel widths for conventional and LDD MOSFET's
  IEEE Electron Device Letters, 1984
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Theory of hot electron emission from silicon into silicon dioxide
  Journal of Applied Physics, 1983
• Hot-electron currents in very short channel MOSFET's
  IEEE Electron Device Letters, 1983
• Impact ionization at very low voltages in silicon
  Journal of Applied Physics, 1982