Temperature Transients of Ion‐Implanted Silicon Wafers during Rapid Thermal Annealing

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Abstract
Ion‐implanted layers increase the heating rates of silicon wafers during rapid thermal annealing, especially in the case of high dose layers and activated layers. This phenomenon is notable in arsenic ion‐implanted layers, but not in boron or boron difluoride ion‐implanted layers. It is supposed that this is caused by free carrier absorption of infrared rays in the ion‐implanted layers. Corresponding with this, the reflectivity in the infrared region increases with implantation dose, but decreases to a level below that of the substrate after annealing, indicating that the absorption coefficient varies with annealing. It is concluded that the absorption of infrared rays in ion‐implanted layers increase the heating rate of the wafer.

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