Al/W/TiN/sub x//TiSi/sub y//Si barrier technology for 1.0- mu m contacts
- 1 February 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (2) , 71-73
- https://doi.org/10.1109/55.2044
Abstract
A reliable contact diffusion barrier has been successfully formed by sintering in nitrogen a physically sputtered W/Ti bilayer. After a 650 degrees C furnace anneal, a TiN/sub x//TiSi/sub y/ layer on contact with the silicon substrate was formed beneath the overlying W. No reaction between N/sub 2/ and W was observed. Arsenic implanted in the silicon substrate tended to retard the silicidation of titanium. Substantial redistribution of both B and As across the silicide layer was also observed during the contact sintering process. The 1.0- mu contacts fabricated with the Al/W/TiN/sub x//TiSi/sub y//Si barrier technology exhibited low and tightly distributed contact resistivities (less than 10/sup -6/ Omega -cm/sup 2/). No excessive leakage of the shallow junctions was observed even after thermally stressing the sample at 400 degrees C for 8 h.Keywords
This publication has 7 references indexed in Scilit:
- Impurity effects in magnetron sputter deposited tungsten filmsJournal of Vacuum Science & Technology B, 1986
- Selective LPCVD Tungsten for Contact Barrier ApplicationsJournal of the Electrochemical Society, 1986
- A versatile, high-performance, double-level-poly double-level-metal, 1.2-micron CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formationJournal of Applied Physics, 1982
- The use of titanium-based contact barrier layers in silicon technologyThin Solid Films, 1982
- Reaction kinetics of tungsten thin films on silicon (100) surfacesJournal of Applied Physics, 1973