Improved performance of millimetre-wave impatt diodes on type-IIa diamond heatsinks

9 December 1976

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 12 (25) , 675-676
https://doi.org/10.1049/el:19760517

Abstract

Thermal resistance and r.f. data are presented for K_a⁻-, V and W-band silicon double-drift impatt diodes employing diamond heatsinks. A power level of 620 mW at 7.7% efficiency has been achieved at 101 GHz.

Keywords

IMPATT DIODES
THERMAL RESISTANCE
RF DATA
MM WAVE
DIAMOND HEATSINKS
W-BAND

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