Large‐area plan‐view sample preparation for gaas‐based systems grown by molecular beam epitaxy
- 1 June 1991
- journal article
- Published by Wiley in Journal of Electron Microscopy Technique
- Vol. 18 (2) , 117-120
- https://doi.org/10.1002/jemt.1060180204
Abstract
We describe a method for plan‐view transmission electron microscopy (TEM) sample preparation that takes advantage of extreme etch‐rate selectivity in GaAs and AlAs in HF/H2O solutions. GaAs/InxGa1‐xAs/GaAs strained‐layer films (x = 0.05, 0.10, 0.19, 0.22) were chemically lifted off using this technique and were mounted on Cu TEM grids such that TEM transparent areas of up to 1 × 2 mm of constant thickness (196.4 nm) could be viewed. This simple, large‐area plan‐view technique uses only chemical methods and significantly extends the usefulness of TEM for the evaluation of crystal quality in GaAs‐based epitaxial systems. The method requires the growth of a release layer of AlAs (10 nm thick) prior to the layered structure of interest.Keywords
This publication has 5 references indexed in Scilit:
- X‐Ray Topography and Precision Diffractometry of Semiconducting MaterialsJournal of the Electrochemical Society, 1989
- Thermal stability of Si/GexSi1−x/Si heterostructuresApplied Physics Letters, 1989
- The Relaxation of InxGa1-xAs/GaAs Strained MultilayersMRS Proceedings, 1989
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974