Activation of ion implanted dopants in α-SiC

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Abstract
In this letter, activation of implanted dopants in 6Hα‐SiC using a pulsed excimer laser is reported. Commercially available substrates are implanted with nitrogen or aluminum. A 308 nm pulsed excimer laser is then used to anneal the samples which are held at room temperature. Point contact current‐voltage (PCIV) measurements are used to extract the carrier concentration of the annealed layers. Initial results suggest complete activation of the implanted dopants. Pulsed laser annealing of ion implanted SiC appears to be an attractive option as compared to furnace annealing at high temperatures.

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