A CVD process for the preparation of transparent conducting layers of antimony‐doped tin oxide has been developed utilizing dibutyl tin diacetate, antimony pentachloride, , , and as carrier gas at a substrate temperature of 400°–550°C. It was designed to fulfill a need for more highly conducting coatings than those obtainable without doping, in the sheet resistance range 50–100 ohm/square, but still possessing an optical transmission in excess of 80% throughout the visible spectrum. Coatings to this specification are used extensively for a variety of electro‐optic devices. A set of optimized deposition conditions is presented together with important optical, electrical, structural, and chemical properties of the films. Typical films have film thicknesses ranging from 1500–3600Å with a sheet resistance of 50–150 ohm/square, a specific resistivity of 0.0015–0.0032 ohm‐cm, an n‐type carrier concentration of , and a Hall mobility of 23 cm2/V‐sec. They exhibit a light transmission of 85–91% net, and have an optimum dopant concentration within the range of 0.6–2.7 atomic per cent of antimony. The films are free of volatile chlorine, are chemically inert, and may be heated in air for prolonged periods without noticeable deterioration. Samples on sapphire substrates were heated in air to 1000°C for several hours without change in the sheet resistance.