Dependence of the exciton-polariton photoluminescence lineshape in GaAs on epitaxial layer thickness
- 1 April 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (1) , 103-105
- https://doi.org/10.1016/0038-1098(85)91044-0
Abstract
No abstract availableKeywords
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