Compensation effects on the electron velocity in submicrometer GaAs MESFETs
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 1144-1145
- https://doi.org/10.1109/16.3376
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Velocity-field dependence in GaAsIEEE Transactions on Electron Devices, 1987
- Electron mobility and velocity in compensated GaAsApplied Physics Letters, 1986
- Non-steady-state carrier transport in semiconductors in perspective with submicrometer devicesPublished by Springer Nature ,1985
- Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulationIEEE Transactions on Electron Devices, 1983
- Two-dimensional particle models in semiconductor-device analysisElectronics Letters, 1974