Observation of anomalous far-field intensity distributions in semiconductor lasers and their explanation

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Abstract
The observed variations in the far-field intensity distributions of index-guided lasers correlates well with variations in the near-field intensity distributions. The far- and near-field nonuniformities (large intensity variations generally attributed to scattering) arise from variations in the active region dimensions along the length of the optical cavity. Model calculations are presented which show that 20% variation in active width can cause 20%–40% intensity modulation in the far field. The magnitude of the observed far-field nonuniformities depends on the laser structure and the details of the fabrication process. For example, the capped mesa buried heterostructure lasers generally show less scattering-type far-field nonuniformities than the etched mesa buried heterostructure lasers.

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