New structures for charge-coupled devices

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (11) , 1444-1445
https://doi.org/10.1109/PROC.1972.8922

Abstract

The buried-channel concept in charge-coupled devices (CCD's) is extended to new CCD structures which have no oxide interfaces. The advantages of such devices for technical applications are presented.

Keywords

CHARGE COUPLED DEVICES
LEAKAGE CURRENT
VOLTAGE
ELECTRON MOBILITY
ELECTRODES
SCHOTTKY BARRIERS
MOS CAPACITORS
SEMICONDUCTOR DEVICE DOPING
ACOUSTICAL ENGINEERING
SEMICONDUCTOR DEVICE NOISE

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