Study of deep level in bulk P -InP by admittance spectroscopy
- 20 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (2) , 41-43
- https://doi.org/10.1049/el:19830031
Abstract
We report the application of diode admittance spectroscopy in characterising traps in Mg-doped InP. Measurements performed on Au-InP Schottky diodes have identified a hole trap located 0.15 eV above the valence band of InP. Other characteristic parameters such as trap density and hole capture cross-section have also been determined, with results suggesting hole capture at a neutral trapping centre.Keywords
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